absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 5.0 i d @ v gs = 12v, t c = 100c continuous drain current 3.2 i dm pulsed drain current ? 20 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 150 mj i ar avalanche current ? 5.0 a e ar repetitive avalanche energy ? 7.5 mj dv/dt p eak diode recovery dv/dt ? 1.8 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 (for 5s) weight 1.0 (typical) g pre-irradiation o c a radiation hardened power mosfet surface mount (smd-0.5) 02/07/03 www.irf.com 1 smd-0.5 product summary part number radiation level r ds(on) i d qpl part number irhnj7330se 100k rads (si) 1.39 5.0a jansr2n7465u3 features: single event effect (see) hardened ultra low r ds(on) low total gate charge proton t olerant simple drive requirements ease of paralleling hermetically sealed surface mount ceramic package light weight for footnotes refer to the last page irhnj7330se jansr2n7465u3 400v, n-channel ref: mil-prf-19500/676 rad hard ? hexfet ? technology international rectifiers radhard tm hexfet ? mosfet technology provides high performance power mosfets for space applications. this technology has over a de- cade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. pd - 93829b downloaded from: http:///
irhnj7330se, jansr2n7465u3 pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 400 v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.48 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 1.39 v gs = 12v, i d = 3.2a resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.3 s ( )v ds > 15v, i ds = 3.2a ? i dss zero gate voltage drain current 50 v ds = 320v ,v gs =0v 250 v ds = 320v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 41 v gs =12v, i d = 5.0a q gs gate-to-source charge 7.0 nc v ds = 200v q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 25 v dd = 200v, i d = 5.0a, t r rise time 75 v gs =12v, vr g = 7.5 t d (off) turn-off delay time 58 t f fall time 58 l s + l d total inductance 4.0 c iss input capacitance 600 v gs = 0v, v ds = 25v c oss output capacitance 165 p f f = 1.0mhz c rss reverse transfer capacitance 60 na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thj-pcb junction-to-pc board 6.9 soldered to a 2 square copper-clad board c/w measured from the center of drain pad to center of source pad source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 5.0 i sm pulse source current (body diode) ? 20 v sd diode forward voltage 1.2 v t j = 25c, i s = 5.0a, v gs = 0v ? t rr reverse recovery time 516 ns t j = 25c, i f = 5.0a, di/dt 100a/ s q rr reverse recovery charge 3.8 cv dd 50v ? t on forward tu rn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page downloaded from: http:///
www.irf.com 3 irhnj7330se, jansr2n7465u3 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the t o-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 400 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 50 a v ds = 320v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) 1.39 v gs = 12v, i d = 3.2a r ds(on) static drain-to-source v sd diode forward voltage 1.2 v v gs = 0v, i d = 5.0a on-state resistance (smd-0.5) 1.39 v gs = 12v, i d = 3.2a ion let energy range v ds (v) mev/(mg/cm 2 ) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v cu 28 285 43 325 325 325 325 br 36.8 305 39 325 325 325 275 0 50 100 150 200 250 300 350 0 -5 -10 -15 -20 vgs vds cu br downloaded from: http:///
irhnj7330se, jansr2n7465u3 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.01 0.1 1 10 100 5 7 9 11 13 v = 50v 20 s pulse width ds v , gate-to-source volta g e (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.001 0.01 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 5.0a downloaded from: http:///
www.irf.com 5 irhnj7330se, jansr2n7465u3 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 1 10 100 0 300 600 900 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss g s g d , ds rss g d oss ds g d c rss c oss c iss 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 v ,source-to-drain volta g e (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 10 100 1000 operation in this area limited by r ds ( on ) sin g le pulse t t = 150 c = 25 c j c v , drain-to-source volta g e (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 10 20 30 40 0 4 8 12 16 20 q , total gate char g e (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 5.3a v = 80v ds v = 200v ds v = 320v ds 5.0a downloaded from: http:///
irhnj7330se, jansr2n7465u3 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. dut y factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse ( thermal response ) 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) i , drain current (a) c d downloaded from: http:///
www.irf.com 7 irhnj7330se, jansr2n7465u3 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs pre-irradiation . 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.2a 3.2a 5.0a downloaded from: http:///
irhnj7330se, jansr2n7465u3 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 320 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 50v, starting t j = 25c, l= 12mh peak i l = 5.0a, v gs = 12v ? i sd 5.0a, di/dt 240a/ s, v dd 400v, t j 150c footnotes: case outline and dimensions smd-0.5 pad assignments ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 02/03 downloaded from: http:///
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